Development trends of silicon carbide abrasives

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Development of Silicon Carbide Semiconductor Devices for High Temperature Applications

The semiconducting properties of electronic grade silicon carbide (SiC) crystals, such as its wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platf...

متن کامل

Development trends in silicon photonics

Silicon photonics has become one of the major technologies in this very information age. It has been intensively pursued by researchers and entrepreneurs all over the world in recent years. Achieving the large scale silicon photonic integration, particularly monolithic integration, is the final goal so that high density data communication will become much cheaper, more reliable, and less energy...

متن کامل

A review of silicon carbide development in MEMS applications

Due to its desirable material properties, Silicon Carbide (SiC) has become an alternative material to replace Si for Microelectromechanical Systems (MEMS) applications in harsh environments. To promote SiC MEMS development towards future cost-effective products, main technology areas in material deposition and processes have attracted significant interest. The developments in these areas have c...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Mechanik

سال: 2015

ISSN: 0025-6552

DOI: 10.17814/mechanik.2015.8-9.377